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CS1N50A1

Huajing Microelectronics
Part Number CS1N50A1
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS1N50 A1 ○R General Description： VDSS 500 V CS1N50 A1, the silicon N-channel Enhanc...
Datasheet PDF File CS1N50A1 PDF File

CS1N50A1
CS1N50A1

Overview
Silicon N-Channel Power MOSFET CS1N50 A1 ○R General Description： VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.
0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 9.
5 Ω performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-92, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤11Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.
2pF) l 100% Single Pulse avalanche energy Test ...


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