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CS3N50B4HY Dataheets PDF



Part Number CS3N50B4HY
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS3N50B4HY DatasheetCS3N50B4HY Datasheet (PDF)

Silicon N-Channel Power MOSFET CS3N50 B4HY ○R General Description: VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.4 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the.

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Silicon N-Channel Power MOSFET CS3N50 B4HY ○R General Description: VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.4 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of electron ballast and adaptor Absolute(Tc= 25℃otherwise specified Unless) Symbol Parameter VDSS Drain-to-Source Voltage ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C .


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