Document
Silicon N-Channel Power MOSFET
CS3N50 B4HY
○R
General Description:
VDSS
500 V
CS3N50 B4HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.4 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor
Absolute(Tc= 25℃otherwise specified Unless)
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1
VGS EAS a2 EAR a1 IAR a1 dv/dt a3
Continuous Drain Current Continuous Drain Current TC = 100 °C .