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CS3R50FA9

Huajing Microelectronics

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power MOSFET CS3R50F A9 ○R General Description: VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.4 Ω performance and enhance the avalanche energy. The transistor can be used in...



Huajing Microelectronics

CS3R50FA9

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