Silicon N-Channel Power MOSFET CS1N60 C1H
○R
General Description:
CS1N60 C1H-BD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 1.0 3 9
performance and enhance the avalanche energy. The
transistor can be used in various po...