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CS1N60C1H

Huajing Microelectronics

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power MOSFET CS1N60 C1H ○R General Description: CS1N60 C1H-BD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.0 3 9 performance and enhance the avalanche energy. The transistor can be used in various po...



Huajing Microelectronics

CS1N60C1H

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