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CS1N60C3H

Huajing Microelectronics
Part Number CS1N60C3H
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS1N60 C3H ○R General Description： CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs...
Datasheet PDF File CS1N60C3H PDF File

CS1N60C3H
CS1N60C3H

Overview
Silicon N-Channel Power MOSFET CS1N60 C3H ○R General Description： CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.
0 30 8 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤10.
5Ω) l Low Gate Charge (Typical Data:4.
7nC) l Low Reverse transfer capacitances(Typical:2.
9pF) l 100% Single Pulse avalanche energy Test Applicatio...


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