Silicon N-Channel Power MOSFET CS2N60 A7H
○R
General Description：
VDSS
600 V
CS2N60 A7H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.6 Ω
performance and enhance the avalanche energy. The transistor
can be used in...
