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CS3N60A3

Huajing Microelectronics
Part Number CS3N60A3
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS3N60 A3 ○R General Description： VDSS 600 V CS3N60 A3 the silicon N-channel Enhance...
Datasheet PDF File CS3N60A3 PDF File

CS3N60A3
CS3N60A3

Overview
Silicon N-Channel Power MOSFET CS3N60 A3 ○R General Description： VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.
7 Ω performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
.
Features： l Fast Switching l Low ON Resistance(Rdson≤3.
2Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test App...


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