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CS4N60A7HD

Huajing Microelectronics
Part Number CS4N60A7HD
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS4N60 A7HD ○R General Description： CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS4N60A7HD PDF File

CS4N60A7HD
CS4N60A7HD

Overview
Silicon N-Channel Power MOSFET CS4N60 A7HD ○R General Description： CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-126F, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.
5nC) l Low Reverse transfer capacitances(Typical: 8.
5pF) l 100% Single Pulse avalanche energy Test 600 V 4A 30 W 1.
8 Ω Ap...


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