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CS4N60A3TDY

Huajing Microelectronics
Part Number CS4N60A3TDY
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS4N60 A3TDY ○R General Description： CS4N60 A3TDY, the silicon N-channel Enhanced VDMOS...
Datasheet PDF File CS4N60A3TDY PDF File

CS4N60A3TDY
CS4N60A3TDY

Overview
Silicon N-Channel Power MOSFET CS4N60 A3TDY ○R General Description： CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.
2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.
0 Ω Applicati...


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