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CS6N60A4TY

Huajing Microelectronics
Part Number CS6N60A4TY
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS6N60 A4TY ○R General Description： CS6N60 A4TY, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS6N60A4TY PDF File

CS6N60A4TY
CS6N60A4TY

Overview
Silicon N-Channel Power MOSFET CS6N60 A4TY ○R General Description： CS6N60 A4TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤1.
7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.
7pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 6A 85 W 1.
4 Ω Appli...


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