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CS12N60FA9HD

Part Number	CS12N60FA9HD
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS12N60F A9HD ○R General Description： CS12N60F A9HD, the silicon N-channel Enhanced VDM...
Datasheet	CS12N60FA9HD PDF File

Overview

Silicon N-Channel Power MOSFET CS12N60F A9HD ○R General Description： CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.
5 switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Application...

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