Silicon N-Channel Power MOSFET
CS1N70 A3H-G
○R
General Description：
VDSS
700 V
CS1N70 A3H-G, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
13 Ω
performance and enhance the avalanche energy. The transistor
can be u...
