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CS4N70A3HD-G

Huajing Microelectronics
Part Number CS4N70A3HD-G
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS4N70 A3HD-G ○R General Description： CS4N70 A3HD-G, the silicon N-channel Enhanced V...
Datasheet PDF File CS4N70A3HD-G PDF File

CS4N70A3HD-G
CS4N70A3HD-G

Overview
Silicon N-Channel Power MOSFET CS4N70 A3HD-G ○R General Description： CS4N70 A3HD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and char...


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