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CS6N70FA9D

Huajing Microelectronics
Part Number CS6N70FA9D
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS6N70F A9D General Description: CS6N70F A9D the silicon N...
Datasheet PDF File CS6N70FA9D PDF File

CS6N70FA9D
CS6N70FA9D


Overview
Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS6N70F A9D General Description: CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for systemminiaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features: l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit o...



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