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CS10N80FA9D

Huajing Microelectronics

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power MOSFET CS10N80F A9D ○R General Description: CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 60 0.72 performance and enhance the avalanche energy. The transistor can be used in various...



Huajing Microelectronics

CS10N80FA9D

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