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CS5N90FA9H Dataheets PDF



Part Number CS5N90FA9H
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS5N90FA9H DatasheetCS5N90FA9H Datasheet (PDF)

Silicon N-Channel Power MOSFET CS5N90F A9H ○R General Description: CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resist.

  CS5N90FA9H   CS5N90FA9H


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Silicon N-Channel Power MOSFET CS5N90F A9H ○R General Description: CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤2.5Ω ) l Low Gate Charge (Typical Data:31nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications: ATX Power、LED Power. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Aval.


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