Silicon N-Channel Power MOSFET CS3N50 B3
○R
General Description：
VDSS
500 V
CS3N50 B3, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W
which reduce the conduction loss, improve switching
RDS(ON)
2.5 Ω
performance and enhance the avalanche energy. The transistor
can be used in vari...
