isc Silicon NPN Power Transistor
BD635
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Complement to Type BD636 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(...
