2EDL23N06PJ

2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap Diode Features  Infineon thin-film-SOI-technology  Fully operational to +600 V  Integrated Ultra-fast, low RDS(ON) Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capability +1.8 A/-2.5 A  Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology  Interlock, Enable, Fault, and over current protection  10 ns typ., 60 ns max. propagation delay matching  dV/dt immune ±50 V  Undervoltage lockout for both channels  3.3 V, 5 V and 15 V input logic compatible  RoHS compliant Potential applications Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ. CL=4.9 nF) = 620 V max. = 1.8 A/2.5 A = 10 V - 17.5 V = 60 ns max. = 37 ns/48 ns Package DSO-14  Motor drives, general purpose inverters  Refrigeration compressors, home appliance  Half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no ...