BFP842ESD
SiGe:C NPN RF bipolar transistor
Product description
The BFP842ESD is a high performance RF heterojunction bi...
BFP842ESD
SiGe:C
NPN RF bipolar
transistor
Product description
The BFP842ESD is a high performance RF heterojunction bipolar
transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.
Feature list
Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies:
NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA
OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
Suitable for low voltage collector resistor)
applications
e.g.
VCC
=
1.2
V
and
1.8
V
(2.85
V,
3.3
V,
3.6
V
require
corresponding
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
Wireless communications: WLAN, WiMAX and Bluetooth Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite
radio (SDARs, DAB) and C-band LNB (1st and 2nd stage LNA) Multimedia applications such as mobile/portable TV, mobile TV and FM radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee
Device information
Table 1
Part information
Product name / Ordering code BFP842ESD / BFP842ESDH6327XTSA1
Package SOT343
Pin configuration
Marking
1 = B 2 = E 3 = C 4 = E T9s
Pieces / Reel 3000
Attention: ESD (Electrostatic discharge) se...
