Dual N-Channel MOSFET
AUTOMOTIVE GRADE
AUIRF7303Q
Features Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Log...
Description
AUTOMOTIVE GRADE
AUIRF7303Q
Features Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
S1
G1 S2 G2
1 2 3 4
8 D1 7 D1 6 D2 5 D2
Top View
VDSS RDS(on) max. ID
Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7303Q
G Gate
D Drain
30V 0.05 5.3A
S Source
Base part number AUIRF7303Q
Package Type SO-8
Standard Pack
Form
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