Dual N-Channel MOSFET
Features Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Dynamic d...
Description
Features Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7313Q
S1
G1 S2 G2
1 2 3 4
8 D1 7 D1 6 D2 5 D2
Top View
VDSS RDS(on)
typ. max.
ID
30V 23m 29m 6.9A
Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7313Q
G Gate
D Drain
S Source
Base part number AUIRF7313Q
Package Type SO-8
Standard Pack
Form
Quantity
Tape and Reel
400...
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