AUIRF7313Q

  Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7313Q   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) typ. max. ID 30V 23m 29m 6.9A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. SO-8 AUIRF7313Q G Gate D Drain S Source Base part number AUIRF7313Q Package Type SO-8 Standard Pack Form Quantity Tape and Reel 400...