AUIRF7379Q

  AUTOMOTIVE GRADE AUIRF7379Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Surface Mount  Available in Tape & Reel  150°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified *   N-CHANNEL MOSFET N-CH P-CH S1 1 G1 2 8 D1 7 D1 VDSS 30V -30V S2 3 6 D2 RDS(on) typ. 0.038 0.070 G2 4 5 D2 max. 0.045 0.090 P-CHANNEL MOSFET ID 5.8A -4.3A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive...