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FQP50N06
N-Channel Power MOSFET
Description
FQP50N06 ® FQP50N06 Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating 1. Gate { { 2. Drain ● ◀▲ ● ● { ...
Thinki Semiconductor
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