Transys
Electronics
LIMITED
EPITAXIAL SILICON POWER TRANSISTORS
BD175 BD177 BD179 NPN
BD176 BD178 BD180 PNP
ECB Inte...
Transys
Electronics
LIMITED
EPITAXIAL SILICON POWER
TRANSISTORS
BD175 BD177 BD179
NPN
BD176 BD178 BD180
PNP
ECB Intended for use in Medium Power Linear Switching Applications
TO126 Plastic Package
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC
Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range
SYMBOL
VCEO VCBO VEBO
IC ICM PD
PD
Tj, Tstg
BD175 BD176
45 45
BD177 BD178
60 60 5.0 3.0 7.0 1.25 10 30
- 65 to +150
BD179 BD180
80 80
UNIT
V V V A A W mW/ºC W
ºC
THERMAL CHARACTERISTICS Junction to Ambient in free air
Junction to Case
Rth (j-a) Rth (j-c)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
ICBO
VCB=45V, IE=0 VCB=60V, IE=0
Emitter Cut off Current Collector Emitter Sustaining Voltage
IEBO *VCEO (sus)
VCB=80V, IE=...