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CHK8015-99F

Part Number	CHK8015-99F
Manufacturer	United Monolithic Semiconductors
Description	16W Power Transistor
Published	Nov 28, 2016
Detailed Description	CHK8015-99F 16W Power Transistor GaN HEMT on SiC Description The CHK8015-99F is a 16W Gallium Nitride High Electron Mobi...
Datasheet	CHK8015-99F PDF File

Overview

CHK8015-99F 16W Power Transistor GaN HEMT on SiC Description The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications.
The circuit is manufactured with a 0.
25µm gate length GaN HEMT technology on SiC substrate.
It is proposed in a bare die form and requires an external matching circuitry.
Main Features ■ Wide band capability up to 18GHz ■ Pulsed and CW operating modes ■ GaN technology: High Pout & High PAE ■ DC bias: VD=30V @ID_Q=200mA ■ Chip size 0.
88x2x0.
1mm ■ RoHS N°2011/65 ■ REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V...

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CHK8015-99F 16W Power Transistor - United Monolithic Semiconductors

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