CHA6015-99F

CHA6015-99F 2-8GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6015-99F is a HPA that provides typically 37.5dBm output power on the frequency band 2-8GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performances: 2-8GHz ■ Linear Gain: 18.5dB ■ Pout at 3dB compression : 37.5dBm ■ PAE at 3dB compression : 29% ■ DC bias: Vd=7Volt@Id=2A ■ Chip size: 4.68x6.53x0.07mm Main Electrical Characteristics Tamb.= +25°C, Vd = 7V, Id (Quiescent) = 2A, CW Symbol Parameter Min Typ Max Unit Freq Frequency range 2 8 GHz Gain Linear Gain 18.5 dB P3dB PAE3dB Output Power @3dB gain compression Power Added Efficiency @ 3dB gain compression 37.5 29 dBm % Ref. : DSCHA601533...