CHA3667aQDG

CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PowerpHEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. It is available in lead-free SMD package. Main Features ■ Broadband performance 7-20GHz ■ Self-biased ■ 23dB gain @ 2.7dB noise figure ■ 20dBm Output power @1dBcp ■ DC power consumption, 175mA @ 4.2V ■ 24L-QFN4X4 SMD package ■ MSL1 UMS A3667A YYWW RFin Vd RFout Main Characteristics Tamb = +25°C, Vd= 4.2V Symbol Parameter Min Typ Max Fop Input frequency range 7 20 G Small signal gain 21 23 NF Noise Figure 2.7 3.5 P-1dB Output power at 1dB gain compression 18.5 20 Id Bias current 130 175 220 ESD Prote...