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CHA3397-QDG Dataheets PDF



Part Number CHA3397-QDG
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description 36-40.5GHz Medium Power Amplifier
Datasheet CHA3397-QDG DatasheetCHA3397-QDG Datasheet (PDF)

CHA3397-QDG 36-40.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3397-QDG is a 4 stage monolithic medium power amplifier, which produces 21dB gain for 18dBm output power. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS .

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CHA3397-QDG 36-40.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3397-QDG is a 4 stage monolithic medium power amplifier, which produces 21dB gain for 18dBm output power. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS A3397 YYWW Main Features ■ Broadband performances: 36-40.5GHz ■ 18dBm Pout at 1dB compression ■ 21dB gain ■ 29dBm OTOI ■ DC bias: Vd= 4.0V, Id= 200mA ■ 24L-QFN4x4 (QDG) ■ MSL1 Sij versus Frequency Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp. OTOI 3rd order Intercept point Min Typ Max Unit 36.0 40.5 GHz 21 dB 18 dBm 29 dBm Ref. : DSCHA3397QDG6113 -.


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