Thermally-Enhanced High Power RF LDMOS FET
PXAC201202FC
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz
Description
The PXAC201202FC is a...
Description
PXAC201202FC
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz
Description
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC201202FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz
3.84 MHz bandwidth
24 60 20 Efficiency 40
16 Gain
20
12 8 PAR @ 0.01% CCDF
0 -20
4 -40
0 30
35
40
45
c201202fc-v2-gr1a
-60
50
Average Output Power (dBm)
RF Specifications, 1880 MHz
Features
Broadband internal matching
Asymmetric Doherty design - Main: P1dB = 35 W Typ - Peak: P1dB...
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