Thermally-Enhanced High Power RF LDMOS FET
PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDM...
Description
PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA120501EA Package H-36265-2
POUT (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
60 55 50 45 40 35 30
18
70
Efficiency
60
Output Power
50 40
1200 MHz
30
1300 MHz
20
1400 MHz
10
a120501ea_g1-1
22 26 30 34 38
PIN (dBm)
Features
Broadband input matching
High gain and efficiency
Typical Pulsed CW performance, 1200 – 1400MHz, 50 V, 300 µs pulse width, 10 % duty cycle, class AB - Output power at P1dB = 54 W - Efficiency = 55% - Gain = 16 dB
Integ...
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