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PTFC260202FC

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performa...



Infineon

PTFC260202FC

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