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PTFC262157FH

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum performance as the peak side transistor in a Doherty amplifier. Other fea...



Infineon

PTFC262157FH

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