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PTFC262808SV

Part Number	PTFC262808SV
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a...
Datasheet	PTFC262808SV PDF File

Overview

PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2620 to 2690 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package.
Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC262808SV Package H-37275G-6/2 with formed leads Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.
84 MHz BW 19 40 18 Gai...

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PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET - Infineon

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