Thermally-Enhanced High Power RF LDMOS FET
PTRA093302FC
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 – ...
Description
PTRA093302FC
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 – 768 MHz
Description
The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTRA093302FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz,
3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW
24 60
Efficiency
20 40
16 20
Gain
12 0
8
PAR @ 0.01% CCDF
4
-20 -40
0 25
ptra093302dc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
Input matched
Asymmetric Doherty design - Main: P1dB = 150 W Typ - Peak:...
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