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PTRA093302FC

Infineon

Thermally-Enhanced High Power RF LDMOS FET

PTRA093302FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 – ...


Infineon

PTRA093302FC

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Description
PTRA093302FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 – 768 MHz Description The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA093302FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 ptra093302dc_g1 -60 30 35 40 45 50 55 Average Output Power (dBm) Features Input matched Asymmetric Doherty design - Main: P1dB = 150 W Typ - Peak:...




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