PTFB213208FV

PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2 IMD3, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 IMD Up -35 30 25 -40 IMD Low -45 -50 -55 20 ACPR Efficiency 15 10 5 -60 b213208fv-gr16 0 36 38 40 42 44 46 48 50 52 Average Output Power (dBm) Features Broadband internal matching Wide video bandwidth Typical p...