PTFB213004F
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Description
The PTFB213004F is a 300-wa...
PTFB213004F
High Power RF LDMOS Field Effect
Transistor 300 W, 2110 – 2170 MHz
Description
The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package.
PTFB213004F Package H-37275-6/2
ACP Up & Low (dBc) Drain Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB,
3.84 MHz bandwidth
-10 50
-20 40 Efficiency
-30 30
-40 ACP low
-50
-60 34
ACP up
38 42 46 50 Output Power, avg. (dBm)
20
10
0 54
Features
Broadband internal matching
Enhanced for use in DPD error correction systems
Wide video bandwidth
Typical single-carrier WCDMA performance at 2170 MHz, 30 V - POUT = 49.5 dBm Avg - Gain = 17.5 dB - Efficiency = 30%
Increased negative gate-source voltage range for improved performance in Doherty...
