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PTFB201402FC Dataheets PDF



Part Number PTFB201402FC
Manufacturers Infineon
Logo Infineon
Description High Power RF LDMOS Field Effect Transistor
Datasheet PTFB201402FC DatasheetPTFB201402FC Datasheet (PDF)

PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB201402FC Package H-37248-4 Power Gain (dB) Input Return Loss (dB) Smal.

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