PTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404...
PTFB183404E PTFB183404F
High Power RF LDMOS Field Effect
Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB183404E Package H-36275-8
PTFB183404F Package H-37275-6/2
IMD & ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25 35
-30 30
-35 IMD Low
-40 IMD Up
25 20
-45 15
-50
-55
-60 36
ACPR Efficiency
38 40 42 44 46 48 50 Average Output Power (dBm)
10
5
0 52
Features
Broadband internal input and output matching
Wide video bandwidth
...