Thermally-Enhanced High Power RF LDMOS FET
PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an...
Description
PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTAC210802FC Package H-37248-4
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 19 BW 3.84 MHz, Doherty Fixture
Efficiency 18
55 50
17 45
16
Gain
40
15 35
14 30
13
c210802fc-gc
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Features
Asymmetrical design - Main : P1dB = 19 W Typ - Peak : P1dB = 60 W Typ
Broadband internal match...
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