CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BU941ZR3
BVCEO IC VCESAT(MAX)
Spec. No. : C660R3 Issued Dat...
CYStech Electronics Corp.
NPN Epitaxial Planar
Transistor
BU941ZR3
BVCEO IC VCESAT(MAX)
Spec. No. : C660R3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/5
350V 15A 2V @12A
Features
High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package
Applications
High ruggedness electronic ignitions
Equivalent Circuit
BU941ZR3
B
C
Outline
TO-3P
B：Base C：Collector E：Emitter
E
BCE
BU941ZR3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C660R3 Issued Date : 2016.11.02 Revised Date : Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @ TC=25°C Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : *1. Single Pulse tp<5ms
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) IB(DC) IB(Pulse)
PD
RθJC Tj Tstg
Limits
350 350 5 15 30 1 5
155
0.97 175 -...
