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IPG20N10S4L-35

Infineon

Power-Transistor

OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...


Infineon

IPG20N10S4L-35

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Description
OptiMOS™-T2 Power-Transistor Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested IPG20N10S4L-35 Product Summary V DS R 4) DS(on),max ID 100 V 35 mW 20 A PG-TDSON-8-4 Type IPG20N10S4L-35 Package Marking PG-TDSON-8-4 4N10L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 20 17 80 60 15 ±16 43 -55 ... +175 Unit A mJ A V W °C Rev. 1.1 page 1 2012-05-15 IPG20N10S4L-35 Parameter Symbol Conditio...




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