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IPG20N06S2L-35A

Infineon

Power-Transistor

OptiMOS® Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260...


Infineon

IPG20N06S2L-35A

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Description
OptiMOS® Power-Transistor Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) IPG20N06S2L-35A Product Summary VDS RDS(on),max4) ID 55 V 35 mΩ 20 A PG-TDSON-8-10 Type IPG20N06S2L-35A Package PG-TDSON-8-10 Marking 2N06L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active2) I D T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V Pulsed drain current2) one channel active I D,pulse - Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage E AS I AS V GS I D=10A - Power dissipation one channel active P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value 20 Unit A 20 80 100 15...




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