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IPG20N04S4L-07A

Infineon

Power-Transistor

OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...


Infineon

IPG20N04S4L-07A

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Description
OptiMOS™-T2 Power-Transistor Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) IPG20N04S4L-07A Product Summary VDS RDS(on),max4) ID 40 V 7.2 mΩ 20 A PG-TDSON-8-10 Type IPG20N04S4L-07A Package PG-TDSON-8-10 Marking 4N04L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 20 20 80 230 15 ±16 65 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2013-...




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