IPG20N04S4-12A
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualif...
IPG20N04S4-12A
OptiMOS™-T2 Power-
Transistor
Features Dual N-channel Normal Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)
Product Summary VDS RDS(on),max4) ID
40 V 12.2 mΩ 20 A
PG-TDSON-8-10
1
Type IPG20N04S4-12A
Package PG-TDSON-8-10
Marking 4N0412
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4)
Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V2)
I D,pulse -
E AS I AS V GS
I D=10A -
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
20
80 80 15 ±20 41 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2013...
