IPAN60R650CE

IPAN60R650CE MOSFET 600VCoolMOS™CEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 650 mΩ Id. 9.9 A Qg.typ 20.5 nC ID,pulse 19 A Eoss@400V 1.9 µJ Type/OrderingCode IPAN60R650CE Package PG-TO 220 FullPAK Narrow Lead Marking 60S650CE PG-TO220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 RelatedLinks see Appendix A Final Data Sheet Final Data Sheet 1 Rev.2.1,2016-11-28 1 Rev. 2.2, ...