Document
Ultrafast Rectifier
INCHANGE Semiconductor
MUR860CT
FEATURES ·Ultrafast 50 nanosecond recovery time ·Popular TO-220 package ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The MUR860CT is designed for use in switching power
Supplies,inverters and as free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
IFSM Nonrepetitive Peak Surge Current
TJ Junction Temperature
Tstg Storage Temperature Range
VALUE UNIT 600 V 8A 100 A
-65~175 ℃ -65~175 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Fast Recovery Rectifier
INCHANGE Semiconductor
MUR860CT
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF Maximum Instantaneous Fo.