MBRF30H100CT

Schottky Barrier Rectifier INCHANGE Semiconductor MBRF30H100CT FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current 100 V 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 275 rated load conditions A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRF30H100CT THERMAL CHARACTERISTICS SYMBOL PARAMET...