BT134-600E

isc Triacs INCHANGE Semiconductor BT134-600E FEATURES ·With TO-126P package ·Designed for use in general purpose bidirectional switching and phase control applications , which are intended to be interfaced directly to microcontrollers , logic integrated circuits and other low power gate trigger circuits. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (full sine wave) ITSM Non-repetitive peak on-state current PGM Peak gate power dissipation PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MIN 600 600 4 25 5 0.5 125 -45~150 UNIT V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ 0.01 0.2 mA 0.01 0.2 mA Ⅰ 10 IGT Gate trigger current Ⅱ VD=12V; IT= 0.1A Ⅲ 10 mA 10 Ⅳ 25 VTM On-state voltage IT= 5A 1.7 V IH Holding current IGT= 0.1A, VD= 12V 15 mA VGT Gate trigger voltage isc website：www.iscsemi.com VD=12V; IT= 0.1A 1.5 V 1 isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor BT134-600E NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any tim...