3DD100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 for 3DD100 and 3DD101. 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP for all, JT, JCT, GS, G, G+ for 3DD100 and 3DD101. TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V Emitter-Base Voltage Max. Collector Current VEBO ICM V A Max. Collector Dissipation Junction Temperature Storage Temperature PCM Tjm Tstg W °C °C Collector-Emitter Leakage ICEO mA Current Collector- Emitter VCE(sat) V Saturation Voltage Drop DC Current Gain hFE E-Base Breakdo...